Proposal of AlGaN/GaN Gated-Anode Diode Model Incorporating Internal HEMT Structure for Loss Analysis Toward Efficient Microwave Rectification

We proposed a new model for gated-anode diodes (GADs) based on gallium nitride (GaN) high-electron mobility transistors (HEMTs) to optimize the device structure toward efficient microwave rectification. This model incorporates a large-signal HEMT model that accurately reflects the device structure of a GAD. We extracted model parameters from fabricated AlGaN/GaN HEMTs and successfully reproduced the characteristics of a GAD fabricated on the same wafer. We performed a large-signal simulation of a bridge-type rectifier circuit using the proposed GAD models. A detailed loss analysis accurately identified the origins of power losses within the device. Our proposed GAD model is effective in exploring the device optimization strategy.