Variability Analysis of Ferroelectric FinFETs for Embedded Non-Volatile Memory Applications

In this study, we conduct a comparative analysis of the process variation induced variability – specifically the random ferroelectric/dielectric phase variation, the metal work function variation, and the line edge roughness – in various ferroelectric field-effect transistors (FeFETs) at the 3 nm technology node, including ferroelectric FinFET (Fe-FinFET), one-sided ferroelectric-metal FinFET (FeM-FinFET), and FeM-FinFET. These variabilities are incorporated into TCAD simulations to quantitatively examine the variation of threshold voltages. As a result, the FeM-FinFET can reduce variability by an average of 12.4% compared to the Fe-FinFET structure and by an average of 55% compared to the one-sided FeM-FinFET structures.