A 22FDX Device and Balun Co-Optimized PA Achieving 23dBm Psat, 34.9% Peak PAE, 19.5% 6dB-PBO PAE and 20.6dB Gain at 28GHz for 5G Application

This work presents the latest improvement on a 2-stage power amplifier (PA) based on the 22FDX mmW Extended Drain FET (EDFET) [1]. Novel device engineering based on EDFET for a lower capacitance enables us to utilize a balun with a higher input inductance, while simultaneously reducing the balun parasitic capacitance. Through device and balun co-optimization, we demonstrate PA performance achieving 23 dBm Psat, 34.9% peak PAE, $19.5 \% 6 ~\text{dB}$-PBO PAE and 20.6dB gain at 28GHz. These improvements make 22FDX continue to be a better choice for low power 5G transceiver application