A 112 Gbps Silicon-Germanium Avalanche Photodiode with Ultra-High Gain-Bandwidth Product

We present a Si-Ge APD with a GBP of 7078 GHz at an input optical power of -24 dBm. It demonstrates sensitivities of -14.9 dBm at 100 Gbps NRZ and -12.8 dBm at 112 Gbps PAM4, both with KP4-FEC. © 2025 The Author(s) OCIS codes: (130.0130) Integrated optics; (200.4650) Optical interconnects; (040.1345) Avalanche photodiodes