Source/Drain Electrode Tuning for Self-Heating Mitigation in Double-Gate IGZO OSFET Using 12-Inch IGZO-on-Si 3D Monolithic Integration

The reliability improvement in a double-gate Indium Gallium Zinc Oxide (IGZO) based oxide semiconductor field effect transistor (OSFET) is observed. The experiment focused on the influence of different source and drain electrode process. The results indicate that process with lower hydrogen content and smaller source-to-drain sheet resistance significantly improve the reliability of the OSFET, reducing self-heating effects and enhancing over-all device performance. The observation is on a 12-inch IGZO-on-Si 3D monolithic integrated wafer.