Heterogeneously Integrated III-V/Silicon C-Band Tunable Lasers on 300-mm Silicon Photonic Wafers

We demonstrate a heterogeneously integrated III-V/Si tunable laser fabricated on a 300-mm silicon photonics platform, achieving a wide tuning range from 1510 to 1570 nm with a side-mode suppression ratio (SMSR) above 50 dB, a Lorentzian linewidth below 30 kHz, and relative intensity noise less than −150 dBc/Hz. This laser delivers on-chip optical power exceeding 20 mW at 100 mA of bias current with low variability across a wafer. With closed-loop control, the laser frequency stability is maintained within ±1 GHz. This tunable laser can be readily integrated with other photonic components, such as wavelength lockers, modulators, and detectors, enabling fully integrated photonic chips for optical communications, sensing, and next-generation computing applications.