Performance of Ring Oscillators for Cryogenic Electronics Integration from 4 to 200 K

In this paper, we present the characterisation of ring oscillator (RO) test circuits fabricated in GlobalFoundries’ (GF) 22nm fully depleted silicon-on-insulator (FD-SOI) process and operating from 200 K down to 4 K. We investigate ROs using NAND, NOR, and inverter standard cell libraries, including low, regular, and high threshold-voltage versions. Alongside temperature variations, we also consider a change in the power supply of ±5% from a nominal 0.8 V. The ROs demonstrate the combined effect of increased mobility, increased threshold voltage, and leakage current processes at cryogenic temperatures on their operation. By averaging over 81 fabricated ROs using three different delay gates and 2 different flavours, we report a statistical characterisation of their properties in the FD-SOI technology over temperature and supply voltage.