A High-Sensitivity and Wide-Dynamic-Range Image Sensor with Extended-Silicon Responsive Spectrum from 254 nm to 1310 nm

The spectral response of silicon-based CMOS image sensors has been limited from 300 nm (UVB) to 1100 nm (NIR) with a non-uniform external quantum efficiency (EQE). Breaking through this limitation can push Si-based image sensors towards broader-band applications such as secure surveillance and scientific instrumentation. Here, we propose a silicon-based image sensor with a five-transistor active pixel sensor (5T-APS) design that is based upon an embedded photodiode-body-biased MOSFET (PD-MOS), achieving an EQE of 639 % at 254 nm and 154 % at 1310 nm, and a wide dynamic range of over 120 dB. Furthermore, we have developed a readout circuit, and a compact hardware system that works for the 5T-APS pixel arrays.