Effect of Optical Pulsewidth on Domain Evolution during the Delay Stage in GaAs PCSS

In high-power applications of photoconductive semiconductor switches (PCSS), the optimization of optical pulse parameters has a significant impact on device performance. To analyze the impact of optical pulse width on the delay characteristics of a Gallium Arsenide photoconductive semiconductor switch (GaAs PCSS) with opposed electrode structure, a two-dimensional device simulation model was employed to obtain the switch’s delay time under the influence of different pulsewidths. Then, the multi-avalanche domain theory was introduced to explain the influence of optical pulsewidth on the domain evolution process. The results demonstrate that narrower pulsewidth promotes the development of domains, enabling the PCSS to transition to the on-state more rapidly.