Energy Efficient Ground Enhanced Scheme for Large-Scale SOT-MRAM Arrays

With the development of the emerging edge computing, Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) becomes a promising choice to replace the traditional memories. SOT-MRAM faces challenges like IR-drop and power consumption in largescale arrays. This work proposes a ground enhanced scheme to improve write/read operation voltage at farside bit-cells. Simulation results demonstrate successful magneto-state switching within 2 ns in 512 × 512 array using nominal 1.2 V supply voltage, write energy dissipation can be reduced by maximum to 57.5 % and sensing margin is enhanced by 20 %.