Endurance Optimization of 40nm RRAM towards 106 Cycles by Tuning the Stoichiometry of TiN Bottom Electrode

This work proposes tuning the stoichiometry of TiN bottom electrode (BE) as an effective approach to improve the endurance of 40nm resistive random-access memory (RRAM). By adopting an inert TiN BE, the optimized RRAM achieves a high endurance close to 10⁶ cycles, matching the performance of embedded Flash (eFlash). The mechanism for the impact of TiN stoichiometry on the endurance performance is clarified through electrical tests and material characterizations.