Reverse Blocking Gan on Sic Hemts With Ultralow Dynamic Ron for 1200 V Power Applications

This work demonstrates reverse-blocking (RB) GaN on SiC HEMTs and GaN-Si(100) Cascode Switches on a SiC substrate. The RB GaN HEMTs showed a turn-on voltage ($V_{\text{ON}}$) of 0.3 V and extremely low dynamic $R_{\text{ON}}$ degradation at 2200 V, which were the best among all existing GaN power devices with reverse-blocking capability. Furthermore, GaNSi(100) Cascode Switches were fabricated and showed great promise for future power IC (1200-1900 V) applications.