First Demonstration of 4-Inch $\mathbf{G a N}$ on $\mathbf{S i O}_{\mathbf{2}} / \mathbf{S i}(\mathbf{1 0 0})$ Monolithic Integration Materials by Ion-Cutting Technique With Hydrophilic Wafer Bonding at Elevated Temperature

In this study, we first demonstrate a 4-inch GaN single crystal thin film monolithically integrated with $\operatorname{Si}(100)$ substrate, forming a GaNOI structure (GaN on $\text{SiO}_{2} / \text{Si}(100)$), which was fabricated by ion-cutting technique with hydrophilic wafer bonding at elevated temperature. The exfoliated 4 -inch GaN bulk wafer was survival which can be recycled to reduce the material cost. After the post-annealing and CMP processes, the GaNOI possessed high material quality. Our study suggests the possibility of combination of GaN-based optoelectronic devices and Si-based CMOS.