Comprehensive Investigation of the Disturb and Retention Issues in Scaled FeNAND Arrays

$\text{HfO}_{2}$-based ferroelectric field-effect transistor (FeFET) is a viable solution for next-generation 3D NAND technology. This work comprehensively investigates the array-level reliability of scaled FeNAND arrays, featuring the first exploration of the significant impact of adjacent cell interactions on both disturb and retention issues. Array-level disturb-free operation in 3 bits/cell storage is achieved via bias optimization. New insights into the mechanisms underlying cell-to-cell disturb and retention degradation are provided, highlighting the critical role of electric field and charge coupling between adjacent cells.