A Controlled Metal Doping Method Based on MoS2 Top-Gate Transistor

This study proposes a strategy for controllably tuning the threshold voltage of two-dimensional (2D) transistors. By depositing different metals with low work functions in the channel region of MoS2 transistors, different doping levels are achieved. Experimental results indicate that aluminum enables controllable n-doping through adjustments in thickness without degrading mobility and subthreshold swing. By combining transistors with different threshold voltages, we successfully fabricated enhancement and depletion (E-D) mode inverters with adjustable flip-flop voltages. This research provides a pioneering methodology for achieving controllable doping in 2D semiconductors.