Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI

We present three-independent-gate Reconfigurable Field Effect Transistors, processed on a 300 mm industrial platform. The devices, able to function as both n-type and p-type transistors, were built on a GlobalFoundries fully-depleted silicon-on-insulator technology, and show highest symmetry between the on-state currents of both polarity modes, as well as a clearly defined multi-VT behavior. Based on them, we show electrical transient measurements demonstrating the functionality of a highly reconfigurable logic gate, the RGATE, able to yield up to eight different logic functions using only four transistors. Furthermore, we developed a Verilog-A table model of the presented transistors, that we used to build a 2-bit adder/2-bit half subtract reconfigurable circuit demonstrating the functionality of a highly tiled, security-oriented architecture employing only RGATEs.