A BSIM Compact Model of Two-Dimensional Semiconductor Field Effect Transistors

In this work, a compact model for two-dimensional semiconductor field effect transistors (2DFETs), based on the BSIM-CMG framework, is developed. We start with modeling the channel free charge density near the source side and the drain side, and achieve an explicit drain to source current expression. We incorporate this core model for 2DFETs with the sub models, including mobility degradation, velocity saturation, subthreshold swing degradation, short channel effect and self-heating in BSIM-CMG. This model is validated against measurements from state-of-the-art MoS2-based FETs.