Heterogeneous Integration of Compound Semiconductor Materials and Devices by Ion-Cutting Technique

The heterogeneous integration of compound semiconductors with Si substrates can combine the cost advantage and maturity of Si technology with the superior performance of compound semiconductors, enabling a new class of highperformance integrated circuits with multiple functionalities for the post-Moore era. This work provides a brief description of the ion-cutting technique, which basically consists of ion implantation, wafer bonding, annealing to achieve exfoliation, and polishing. In addition to the industrial production of silicon-on-insulator (SOI) wafers with diameters up to 300 mm, several non-silicon semiconductor thin films, such as III-V compound semiconductors and wide bandgap semiconductors, have been exfoliated and transferred to foreign substrates using the ion-cutting technique.