AlN Gap-Fill Process by Aerosol Deposition Method for Application in 3D-IC Packaging

We investigated the gap-fill of aluminum nitride with high thermal conductivity using the aerosol deposition method (ADM) to address the thermal challenges of three-dimensional integrated circuits (3D-ICs). The gap-fill behavior of ADM was examined in detail through cross-sectional analyses and an exploration of its deposition mechanisms. Our findings demonstrate that ADM is highly suitable for gap-filling applications due to its intrinsic characteristics: bottom-up deposition, corner trimming, and a transition from deposition to planarization, which collectively enable rapid and efficient filling between chiplets. These results underscore the significant potential of ADM as an innovative packaging technology for 3D-ICs.