High-Power Multi-Wavelength Laser Array With Uniform Spacing Based on Asymmetric Equivalent π Phase Shift

We experimentally demonstrated a high-power 16-wavelength DFB laser array with 1.6 nm (200 GHz) channel spacing based on the asymmetric equivalent $\pi $ phase shift ( $\pi $ -EPS). The $\pi $ -EPS is positioned at 1/5 of the laser cavity length near the facet with a high-reflection (HR) coating, enhancing the yield of single longitudinal mode (SLM) operation. The measured channel spacing is 1.6 nm $\pm ~0.1$ nm at a bias current of 250 mA. The array’s output power exceeds 120 mW for each channel at 400 mA. The SLM performance is achieved, with side mode suppression ratios (SMSRs) greater than 50 dB at room temperature. Furthermore, at 70 mA bias current, the relative intensity noise (RIN) remains below -160 dB/Hz. These results suggest that this laser array holds significant potential for large-scale silicon photonics applications. Therefore, the proposed laser array will be beneficial to the applications of large-scale silicon photonics.