Ferroelectrics for Vertical NAND Flash Applications

We present a comprehensive overview of the integration of ferroelectrics in vertical NAND for continued z-scaling. Here, we report the engineering of ferroelectric gate stacks to achieve large MW operation using dielectric inserts. Further, we discuss the reliability challenges in these devices including (1) disturb, (2) retention and (3) endurance highlighting the importance of understanding and engineering the interplay between trap dynamics and polarization switching.