Enhanced Floating Random Walk Algorithm for Capacitance Extraction Considering Damage Effects

This paper presents an enhanced Floating Random Walk (FRW) algorithm designed to address the challenges in 3D capacitance extraction caused by damage effects in semiconductor manufacturing processes. These damage effects, arising from process-induced stress and material deformation, lead to non-Manhattan geometries and variations in dielectric properties, which complicate traditional extraction methods. The improved FRW algorithm incorporates adaptive techniques such as a rotating transition cube and a spherical Gaussian surface to accurately model the irregular geometries and dielectric inhomogeneities. This approach improves the accuracy and efficiency of capacitance extraction, effectively accounting for the geometric distortions and material changes introduced by damage effects in advanced integrated circuits.