Influence of Fluorine Implant on 3.3V NMOS Performance

In this paper, the influence of LDD fluorine implant on 3.3V NMOS device performance is studied. With LDD fluorine implant, reverse short channel effect (RSCE) can be reduced, which means boron transient enhanced diffusion (TED) can be mitigated. Moreover, Isub/IDS is reduced with IDS increasing, which is different from without fluorine implant. This gives more margin for 3.3V NMOS device HCI improvement. When IDS is on target, Isub/IDS can be reduced by ~26% and HCI lifetime can be improved by 4.3times with LDD fluorine implant. TCAD simulation shows less boron pileup at poly corner and lower E-field at surface with fluorine implant, which contributes to better RSCE curve and improved HCI lifetime.