Investigation and Optimization of Zener Diode in Advanced Process Node

Zener diode is widely used in IC design, and its reversed leakage current is an important electrical parameter. As space technology advances, the P/N junction depth of smaller size platforms is shallower and more concentrated, resulting in a larger leakage current and a more near-surface breakdown location for zener diodes. In this paper, the impact of process variations on the leakage current is investigated, and a new approach is proposed to reduce the leakage current by adding a p-type dose injection.