Comparative Performance Analysis of Silicon on Insulator Vertical Super Thin Body FETs Using Silicon and Germanium Body

This article investigates the comparative performance of a Silicon on Insulator vertical super-thin body (SOI VSTB) FET using silicon and germanium materials, utilizing the 3D Senaturus TCAD tool. The impact of stress on the transfer characteristics for Si/Ge VSTB FET is analyzed. In high-performance circuits, germanium demonstrates superior performance, increasing on-state current (ION) significantly, while exhibiting some deterioration in off-state leakage current, subthreshold swing, and drain-induced-barrier-lowering. Using Germanium leads to relative performance degradation in input capacitance, gate-drain capacitance, and output conductance than silicon. However, Ge shows higher transconductance reduces intrinsic delay and improves intrinsic gain, unit-gain cut-off frequency, and gain-bandwidth product.