InAs/Si based Heterojunction TFET as improved in-situ breast cancer biomarker (C-erbB-2) detector

This work proposes on-site detection of C-erbB-2 biomarker present in saliva/serum using an InAs/Si hetero juncture stacked dielectric Tunnel FET (HJ-SD-TFET). The nanocavities created in the biosensors act as the sensing site for properly detecting antigens. Different concentration ranges (healthy/diseased) of the targeted C-erbB-2 biomarker immobilized in the nanocavities are associated with different interface charge concentrations at the interface of the cavity and underlying gate oxide layer, which affect the device characteristics. The device characteristics are investigated in terms of energy bandgap diagram, electric potential, electric field, carrier concentration and transfer characteristics. Thorough observation of the device characteristics provides vital information regarding the range of C-erbB-2 concentration immobilized in the cavities of the proposed biosensor which serves as detection between healthy and diseased individuals with sufficiently high sensitivity.