RF and Circuit Performance Study of InGaAs Core-shell FinFET

Detailed device simulations reveal compelling performance advantages for core-shell III-V FinFETs over their bulk counterparts. Our analysis, comparing DC, analog, and RF characteristics, demonstrates that incorporating a silicon core into the InGaAs FinFET significantly boosts electrostatic integrity and analog performance. Notably, the core-shell design exhibits a high transconductance frequency product (TFP) and gain frequency product (GFP), making it highly attractive for high-frequency applications. Furthermore, the core-shell FinFET’s enhanced linearity translates to less signal distortion, a critical factor for maintaining signal fidelity. The circuit implementation of core-shell and bulk FinFET in the form of a resistive load inverter is studied.