Particle Control for Low-Energy Boron Implantation : CFM: Contamination-Free Manufacturing

We present a case study describing how particles added to wafers during dedicated low-energy boron (LEB) implants can be reduced by the implementation of new hardware to reduce the buildup of boron films on beamline components. The new hardware increases the ion beam angle of incidence on beamline component surfaces to enhance self-sputtering of films and significantly reduces the film growth rate on surfaces near the wafer being implanted. This is important because film growth can lead to delamination which is a particle source. Particle adders can reduce device yields.