A Reconfigurable Dual-Gate WSe2 Transistor for In-Situ Digitalizing Image Processing

The advanced machine vision needs massive image data operation and processing functions. However, multi-functional image processing operated in various circuits modules leads to circuit redundancy. In this work, we presented a reconfigurable dual-gate WSe2 transistor for integrating in-situ digitalizing image processing in one unit. The transistor had polarity conversion as n-type, p-type and ambipolar-type due to electrostatic doping by dual-gate modulation. The optoelectronic response of transistor covered range from 450 nm ultraviolet to 1550 nm infrared. As switching among the electronic characteristic, the transistor could operate in-situ image processing with Gamma transform, image merging and image comparison.