Highly Endurable Single Transistor Latch Operation Using Band-to-Band Tunneling

A single transistor latch (STL) phenomenon in floating body transistors is widely used in memory and next-generation computing applications. This work proposes an STL operation based on band-to-band tunneling (BTBT) to improve endurance. Unlike conventional impact ionization (II), which relies on hot carriers, the proposed method uses cold carriers, reducing the generation of interface traps caused by hot carrier injection. After verifying the operational conditions and mechanisms, the endurance characteristics are systematically evaluated using electrical measurements. The results show that STL operation based on BTBT significantly enhances endurance characteristics compared to II.