Reducing Near-Field Magnetic Radiation and Parasitic Inductance in SiC Half-Bridge Modules via Optimized Shielding Design

Near-field radiation and parasitic inductance are key challenges for silicon carbide (SiC) mosfets. Current packaging techniques aiming at reducing inductance primarily focus on minimizing the commutation loop area, but these methods require complex layouts, routings, and manufacturing processes. Based on the physical principle that inductance is determined by the integral of the magnetic energy density, this manuscript proposes using copper shielding to induce eddy currents, thereby reducing the near-field magnetic radiation energy. The energy reduction further decreases parasitic inductance. Simulations and experiments indicate that for TO-247, the method can reduce inductance by 56.69% (from 23.39 to 10.13 nH) and radiation by 94.75% (from 13.16 to 0.69 μT). Furthermore, using single-layer direct-bonded copper the proposed method can reduce inductance by 81.85% (from 2.81 to 0.51 nH) and radiation by 76.12% (from 13.16 to 0.69 μT). The multimedia folder has included all the critical data, including the package designs, printed circuit board (PCB) designs, simulation files, and experimental raw data.