Single Event Effect Characterization of 128-Layer 3-D TLC NAND Flash Memory With Xtacking Technology

The single event effect (SEE) response under heavy-ion irradiation for 128-layer 3-D triple-level cell (TLC) nand flash memory from Yangtze Memory Technologies Company Ltd. (YMTC) with Xtacking technology is presented in this study. Current variation, bit error map, data pattern, and layer dependence are discussed. The results reveal significant variations in current behavior across different linear energy transfer (LET) levels, with single event functional interruptions (SEFIs) requiring a power cycle for recovery. Configured both in single-level cell (SLC) and TLC modes, we investigate that TLC mode demonstrates a higher density of errors and greater sensitivity in data patterns compared to the SLC mode. In addition, the layer-specific error analysis highlights that the upper layers and boundary layers exhibit higher error rates compared to other layers primarily due to direct exposure to heavy ions in the upper layers and the narrower channel widths in boundary layers. These findings enhance our understanding of 3-D nand flash reliability in aerospace applications and inform the design of robust storage systems for space environments.