An eDRAM Digital In-Memory Neural Network Accelerator for High-Throughput and Extended Data Retention Time

Computing-in-Memory (CIM) optimizes multiply-and-accumulate (MAC) operations for energy-efficient acceleration of neural network models. While SRAM has been a popular choice for CIM designs due to its compatibility with logic processes, its large cell size restricts storage capacity for neural network parameters. Consequently, gain-cell eDRAM, featuring memory cells with only 2–4 transistors, has emerged as an alternative for CIM cells. While digital CIM (DCIM) structure has been actively adopted in SRAM-based CIMs for better accuracy and scalability than analog CIMs (ACIM), previous eDRAM-based CIMs still employed ACIM structure since the eDRAM CIM cells were not able to perform a complete digital logic operation. In this paper, we propose an eDRAM bit cell for more efficient DCIM operations using only 4 transistors. The proposed eDRAM DCIM structure also maintains consistent and accurate output values over time, improving retention times compared to previous eDRAM ACIM designs. We validate our approach by fabricating an eDRAM DCIM macro chip and conducting hardware validation experiments, measuring retention time and neural network accuracy. Experimental results show that the proposed eDRAM DCIM achieves 3× longer retention time than state-of-the-art eDRAM ACIM designs, along with higher throughput without accuracy loss.