A One-Transistor DRAM Memory Cell Using HfO2-Based Ferroelectric-Assisted Charge Trapping Concept

For the first time, we present a one-transistor dynamic random access memory (DRAM) cell using the ferroelectric polarization-assisted charge trapping phenomenon. The gate structure is TiN/Hf0.5Zr0.5O2/SiOX/Si substrate. The spontaneous polarization of ferroelectric Hf0.5Zr0.5O is directed toward the substrate during programming and erasing operations. The purpose of introducing ferroelectric Hf0.5Zr0.5O2 is to induce significant charge trapping. The device utilizes charge trapping for programming and detrapping for erasing. The proposed one-transistor DRAM (1T-DRAM) device shows fast write, latency-free reads, nondestructive readout, and excellent endurance characteristics ( $\gt 10^{{10}}$ ).