Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, implemented in Verilog-A, captures the saturation polarization-electric field (P-E) hysteresis behavior of a ferroelectric capacitor. To validate the model, simulation results are compared between TCAD and SPICE. Under identical programming conditions, the proposed oxide/nitride/ferroelectric (O/N/F) structure demonstrates approximately 3 V higher channel potential than the conventional oxide/nitride/oxide (O/N/O) structure, resulting in improved programming accuracy and cell stability. In addition, SPICE simulations run over an hour faster than TCAD, making the model efficient for circuit-level analysis.