GeSn 320 × 256 Focal Plane Array for Silicon-Based Short-wave Infrared Imaging

In this work, a high-performance 320×256 focal plane array based on group-IV semiconductors has been manufactured on a Si substrate using Ge0.9Sn0.1 film as absorption material. With the help of the read-out circuits, SWIR images have been successfully captured for the first time.