Cascode GaN Power Transistor Robust for Single Event Burnout Caused by Neutron Irradiation

Single event burnout (SEB) caused by neutron irradiation is one of the main failure mechanisms in power devices for terrestrial applications. We report the accelerated test results of SEB for GaN power transistors such as the automotive market. It was confirmed GaN power transistors were extremely robust for SEB. Comparison with Si super junction power transistors and SiC power transistors are provided. Mechanism of SEB for GaN power transistors is discussed through the comparison.