Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved Endurance

We report a material-to-device co-optimization workflow based on multi-scale simulations applied to the endurance improvement of ferroelectric (FE) capacitors engineered with a WOx Oxygen (O) reservoir layer (ORL). Electrical data (on standard HZO FE devices), ab-initio modeling and device-level simulations are synergically used to unveil and identify the processes associated with the presence of the WOx ORL. The acquired know-how is then experimentally validated using HZO FE capacitors engineered with an interfacial WOx ORL that demonstrates enhanced endurance and suppressed trap generation rate.