On How to Implement Experimentally Obtained Defect Characteristics in SiC Device Simulation

Thermal oxidation of 4H-SiC creates defects in both the SiC bulk and at the SiO2/SiC interface. These defects generated by thermal oxidation and post-oxidation annealing of 4H-SiC were characterized using electrical, capacitance-based techniques. The experiments are analyzed using the standard Schottky-Read-Hall model, which was then implemented in the TCAD model to enable direct integration. Key parameters were included into SiC metal-oxide-semiconductor capacitor and Schottky barrier diode TCAD models to evaluate their impact on device characteristics.