Analysis of High Radiofrequency Power InGaN Vacuum Traveling-Carrier Photodiodes

An InGaN-based vacuum traveling-carrier photodiode for terahertz-wave emission at over 300 GHz is theoretically investigated. The photodiode employing a graded-bandgap p-InGaN absorption layer and a vacuum carrier-transport layer is proposed to provide low-capacity and high-speed carrier transport. The photodiode exhibits a radiofrequency power of over 10 mW at 300 GHz.