Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology

In this paper, a characterization procedure for III-V compound semiconductor technology is proposed, with the aim of investigating the performance of state-of-the-art transistors for mm-wave applications. The whole procedure has been successfully applied to a 0.1-µm GaAs pHEMT process, which was characterized under DC, small- and large-signal operations, after a first stress experiment necessary to assess its robustness and stability.