A 6.5kV Full-Bridge SiC MOSFET Module Design

This article presents the successful design, fabrication, and experimental evaluation of a 6.5 kV SiC MOSFET module prototype configured as a full-bridge. The academic literature indicates significant interest in modules of this voltage class, as well as advanced-topology designs such as the full-bridge configuration. However, to the best of the authors’ knowledge, there have not been any reports of full-bridge module designs implemented for voltage levels above 1.7 kV. The module prototype described in this paper is based on the industry-standard XHP3 footprint popularized by Infineon. The specific prototype discussed herein is a sub-scale prototype, which was fabricated and evaluated as a preliminary step to the fabrication of a full-scale prototype. The successful implementation of the prototype discussed in this paper demonstrates the viability of this concept and provides a foundation for continued development.