High Immunity Motor Driver Based on SiC MOSFETs

As one of the core components of electric vertical takeoff and landing vehicles, the motor driver is required to have strong anti-interference ability, small size, and high efficiency. This paper uses Silicon carbide (SiC) MOSFETs as power devices for the main drive inverter section of motor drivers. However, due to the high switching frequencies and low threshold voltage of SiC MOSFETs, parasitic parameters have a significant impact on their switching characteristics at high operating voltage levels. Bridge arm crosstalk and electromagnetic interference are particularly prominent issues. Based on this, this paper studies the anti-interference performance of SiC power devices and proposes relative solutions for practical applications. Finally, this paper completes the design of a control board based on DSP and a driver board based on SiC MOSFET. And the feasibility of the designed high immunity SiC MOSFET motor driver was experimentally verified.