High-quality GaN-based hot electron transistors grown by molecular beam epitaxy

In this article, a high-quality III-nitride-based hot electron transistors structure is homogeneously epitaxized on a 2-inch GaN substrate using plasma-assisted molecular beam epitaxy technology. In addition, the heavily doped GaN (Si-doped) layer, the ultra-thin AIN layer, and the UID-GaN layer all exhibit high epitaxial quality, uniform thickness, smooth surface morphology and $R_{q}\lt 0.78 \mathrm{~nm}$. The fabricated GaN HET exhibits good rectification characteristics and a high current density $J_{\mathrm{E}}\gt2.77 \mathbf{k A} / \mathbf{c m}^{2}$.