Design and Performance Comparison of Low Dropout Regulators for a 32-bit Microcontroller Using 22nm Technology

This paper presents a comparison between two LDOs (Low Dropout Regulators) developed for a PMIC (Power Management Integrated Circuit) responsible for powering a 32-bit microcontroller based on the RISC-V microarchitecture, designed in 22 nm technology. The microcontroller will be integrated with a radio frequency interface for IoT (Internet of Things) applications. Two LDOs were designed: one with external compensation and the other a capacitor-less LDO. Both operate with an input voltage of 2.5V, an output voltage of 0.8V, and a maximum current of 150mA. The externally compensated LDO exhibited greater stability in response to load variations and a higher PSRR (Power Supply Rejection Ratio), while the capacitor-less LDO demonstrated faster regulation speed and occupied a chip area similar to the externally compensated LDO.