Exploring Soft Error Susceptibility in FET Devices via Geant4 Simulation

In recent years, there have been significant advancements in electronic device technology. However, these devices remain vulnerable to Single-Event Effects (SEEs), caused by the interaction of cosmic rays with sensitive regions, potentially leading to processing errors. Thus, it is interesting to investigate the correlation between cosmic ray events and the likelihood of processing errors, particularly concerning the interactions between specific particles and the sensitive areas of the devices. This work presents a study using the Geant4 tool to simulate the interaction of cosmic rays with FET devices and their potentially associated effects. Simulations involve hitting particles such as protons, alpha particles, positive and negative pions, as well as positive and negative muons. These are injected with energies ranging from 0.5 MeV to 100 TeV and at various angles of incidence. Simulations demonstrate that alpha particles generate the most electrons, which is especially relevant in outer space environments. Protons, which constitute the majority of cosmic rays, significantly affect SEEs not only in outer space and low Earth orbit but also at ground level. Although positive muons and pions have a lesser effect, they become prominent at lower altitudes, including at ground level. The angle of incidence is critical in evaluating SEEs, with planar technologies showing a higher occurrence of electron generation. In contrast, finFETs, although producing fewer electrons, exhibit a greater potential for generating bit flip currents.