Ga-Free T2SL Infrared Detector Under Proton Irradiations: Identification of Dark Current Regimes

The purpose of this work is to study the effects of proton irradiation on the dark current of InAs/InAsSb type-II superlattice (T2SL) midwave infrared (MWIR) barrier photodetectors; 60-MeV proton irradiation with fluence up to $8\times 10^{{11}}$ H+/cm2 was applied to the detector maintained at its operating temperature of 150 K. A degradation of dark current is observed under proton irradiation due to displacement damage dose (DDD) effects. Thanks to technology computer-aided design (TCAD) simulations, we identify the different dark current regimes. At high reverse voltage, the device is dominated by the Fowler–Nordheim (FN) current and trap assisted tunneling (TAT).