Temperature Induced Transient Analysis of Dual-Metal, Nano-Wire, FET based Inverter

Here, in the manuscript, a CMOS inverter has been designed using a Dual-Metal, Nano-Wire, FET (Field Effect Transistor). The transfer-characteristics of the CMOS inverter have been analyzed across various temperatures. The Noise Margin derived from these characteristics has been thoroughly examined. Additionally, the response of temperature variation on the transient-response of the CMOS inverter has been investigated. Simulations were carried out using ATLAS 3-D Silvaco.