Ferroelectric Random Access Memory (FeRAM)

Summary

We examine the recent development of ferroelectric memory, along with ferroelectric random access memory (FRAM). Sophisticated non‐volatile memories including resistive random access memory (ReRAM), phase‐change random access memory (PRAM), and magnetoresistive random access memory (MRAM) have all been expanded, but FRAM is the first of these to be commercially available. Currently, a few Mb of extremely dependable FRAM is accessible. FRAM has been used in sophisticated smartcards, RFID tags, and other electronic devices because of its superior electric features, which include fast read/write speeds around 50 ns, low power consumption, and high switching durability around 10 ¹³ . We also discuss recently created materials, manufacturing techniques, and circuit technologies that are anticipated to solve the scalability issue with FRAM.