Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination

In this work, a guard array termination structure using hydrogen plasma technology (H-GAT) was proposed for multi-kV AlGaN/GaN heterojunction Schottky barrier diodes. A highest breakdown voltage (BV) of 9.5 kV, a specific on-resistance ( ${R}_{\textit {ON}}\text {)}$ of $97~\Omega \cdot $ mm, and a capacitance at zero bias ( ${C}_{{j}{0}}\text {)}$ of 4.2 pF/mm were achieved on p-GaN/AlGaN/GaN-on-SiC platform. The fabrication process using hydrogen plasma termination was simple and easy to implement compared with other technologies used in multi-kV devices. This work provides an effective alternative route for the future development of low-cost, high-voltage 10 kV-class GaN power electronics.